Asymmetrical Charge Distribution Over the Strained Silicon Membrane

Strained germanium thin film membrane on silicon substrate for optoelectronics.

This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+)...

Strained Silicon Photonics

A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, t...

First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility

Using first-principles method, we calculate the electronic band structure of biaxially strained silicon, from which we analyze the change in electron and hole effective mass as a function of strain and determine the mobility of electrons and holes in the biaxially strained silicon based on Boltzmann transport theory. We found that electron mobility increases with tensile strain and decreases wi...

Engineering piezoresistivity using biaxially strained silicon

Phosphorus donors in highly strained silicon.

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si(1-x)Ge(x) substrates with x< or =0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density function...